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AG009RKN

12033-89-5 | Trisilicon tetranitride (alpha)

Chemical structure of Trisilicon tetranitride (alpha), CAS 12033-89-5
AG009RKN
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CAS Number 12033-89-5
Catalog Number AG009RKN(AGN-PC-0PEJP4)
Chemical Name Trisilicon tetranitride (alpha)
EC Number 234-796-8
IUPAC Name 2,4,6,7-tetraza-1,3,5-trisilahexacyclo[3.1.1.01,4.02,5.03,6.03,7]heptane
InChI InChI=1S/N4Si3/c1-5-2-6(1)3(5)7(1,2)4(5)6
InChI Key HQVNEWCFYHHQES-UHFFFAOYSA-N
MDL Number MFCD00011230
Molecular Formula N4Si3
Molecular Weight 140.2833
SMILES N12[Si]34N5[Si]16N3[Si]25N46
UNII QHB8T06IDK
Synonyms
Si3N4, silicon nitride, Silicon nitride, 12033-89-5, Silicon nitride (Si3N4), UNII-QHB8T06IDK, QHB8T06IDK, MFCD00011230, Silicon(IV) nitride, alpha phase, Silicon(IV) nitride, Trisilicon tetranitride, N4Si3, Nierite, EINECS 234-796-8, Nano silicon nitride, AC1MJ1WL, Silicon Nitride Nanofiber, Silicon IV nitride Powder, EC 234-796-8, SILICON NITRIDE, Si3N4, HQVNEWCFYHHQES-UHFFFAOYSA-N, Silicon nitride, NIST RM 8983, 8860AF, ZINC247641488, Silicon Nitride Powder, 98.5+% Nano, SILICON NITRIDE, ELECTRONIC GRADE, SC-66878, LS-192755, Silicon nitride fiber, >80% (crystalline), FT-0694612, Silicon nitride Si3N4 GRADE M 11 higher purity, Silicon nitride Si3N4 GRADE B 5 (H.C. STARCK), Silicon nitride Si3N4 GRADE B 7 (H.C. STARCK), Silicon nitride Si3N4 GRADE M 9 (H.C. STARCK), Silicon nitride Si3N4 GRADE M 11 (H.C. STARCK), Silicon nitride, powder, >=99.9% trace metals basis, I14-114678, Silicon nitride, predominantly alpha-phase, <=10 micron, Silicon nitride, ERM(R) certified Reference Material, powder, Silicon(IV) nitride, Electronic Grade, 99.85% (metals basis), Silicon Nitride Si3N4 Grade HIGH PURITY for PV (H.C. STARCK), Particle size distribution standard for sedigraph calibration, NIST SRM 659, Silicon nitride Si3N4 Grade M 11 higher purity, coarse (H.C. STARCK), Silicon nitride, predominantly beta-phase, <=10micron primary particle size, Silicon nitride powder - specific surface area standard, NIST(R) SRM(R) 1900, Silicon nitride, nanopowder, <50 nm particle size (BET), >=98% trace metals basis, Silicon nitride, nanopowder, <50 nm particle size (spherical), >=98.5% trace metals basis, Silicon nitride powders, NIST(R) SRM(R) 656, for quantitative analysis by powder diffraction, Silicon(IV) nitride, MgO binder, sputtering target, 50.8mm (2.0in) dia x 3.18mm (0.125in) thick, Silicon(IV) nitride, MgO binder, sputtering target, 50.8mm (2.0in) dia x 6.35mm (0.250in) thick, Silicon(IV) nitride, MgO binder, sputtering target, 76.2mm (3.0in) dia x 3.18mm (0.125in) thick, Silicon(IV) nitride, MgO binder, sputtering target, 76.2mm (3.0in) dia x 6.35mm (0.250in) thick, STARCERAM(R) N, Silicon Nitride, ready to press powder (rtp), Grade M (machinable) (H.C. STARCK), STARCERAM(R) N, Silicon Nitride, ready to press powder (rtp), Grade P (dry pressing) (H.C. STARCK), Silicone nitride, N4-Si3, Sodium titanium oxide (Na2Ti3O7), CID3084099, Silicon(IV) nitride, 85% min alpha-phase, 95% 50g,

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    Conclusion: The above product meets the specifications of Angene.
    Analyst:Chase
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    Reviewed by:Jessie
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    Angene International Limited